LeTID mitigation via an adapted firing process in p‐type PERC cells from SMART cast‐monocrystalline, Czochralski and high‐performance multicrystalline silicon
نویسندگان
چکیده
In this work, we analyse passivated emitter and rear cells (PERC), based on wafers made from seed manipulation for artificially controlled defects technique (SMART) monocrystalline silicon, magnetically grown conventional Czochralski (mCz Cz) high-performance multicrystalline (hpm) silicon. All were processed identically except the hpm wafers, which received an acidic texture instead of random pyramids. The energy conversion efficiency η SMART 21.4 % is similar to mCz (21.5 %) while being more than higher cells. Furthermore, here show first time that light- elevated temperature-induced degradation (LeTID) mitigated in hpm, Cz PERC without significant losses initial by adapted fast-firing process, incorporating slower firing ramps can be used industrial production. are fired with these no loss ( ) during LeTID testing at 75°C 0.15 suns illumination 1100 h, reference process results due LeTID. For have been treated regenerate boron–oxygen defect prior testing, maximum was reduced .
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ژورنال
عنوان ژورنال: Progress in Photovoltaics
سال: 2021
ISSN: ['1062-7995', '1099-159X']
DOI: https://doi.org/10.1002/pip.3467